Kingston Technology ValueRAM memory module 8 GB 1 x 8 GB DDR3L 1600 MT/s 204-pin SO-DIMM

SKU
KVR16LS11/8
£89.28 £74.40
In Stock
ValueRam
More Information
Internal memory type DDR3L
Memory clock speed 1600 MHz
ECC No
Memory form factor 204-pin SO-DIMM
SKU KVR16LS11/8
EAN 0740617219791
Manufacturer Kingston Technology
Availability In Stock
Product Family ValueRAM
Power
Memory voltage1.35,1.5 V
Technical details
Memory layout1 x 8192 MB
Internal memory8192 MB
Chips organisationX8
Error indicationNo
Country of originTaiwan
Bus clock rate1600 MHz
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forLaptop
Memory form factor204-pin SO-DIMM
CAS latency11
Memory voltage1.35,1.5 V
Memory bus64 bit
Lead platingGold
Module configuration1G X 64
Row cycle time48.125 ns
Refresh row cycle time260 ns
Row active time35 ns
ECCNo
Internal memory typeDDR3L
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forLaptop
Memory form factor204-pin SO-DIMM
CAS latency11
Memory voltage1.35,1.5 V
Memory bus64 bit
Lead platingGold
Module configuration1G X 64
Row cycle time48.125 ns
Refresh row cycle time260 ns
Row active time35 ns
Country of originTaiwan
ECCNo
Internal memory typeDDR3L
Harmonized System (HS) code84733020
Memory data transfer rate1600 MT/s
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Weight & dimensions
Width67.6 mm
Height30 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Memory layout1 x 8192 MB
Internal memory8192 MB
Chips organisationX8
Error indicationNo
Country of originTaiwan
Bus clock rate1600 MHz
Harmonized System (HS) code84733020
  • JEDEC standard 1.35V and 1.5V Power Supply
  • VDDQ = 1.35V and 1.5V
  • 800MT/s fCK for 1600Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB: Height 1.18” (30mm), double sided component

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SKU
KVR16LS11/8
F3-1600C11D-16GNT
F3-12800CL10D-16GBXL
F4-3200C16S-16GVK
F4-2400C16D-16GRS
M378A2K43CB1-CRC
Manufacturer
Kingston Technology
G.Skill
G.Skill
G.Skill
G.Skill
Samsung
ECC
N
N
N
N
N
N
Memory form factor
204-pin SO-DIMM
240-pin DIMM
240-pin DIMM
288-pin DIMM
260-pin SO-DIMM
288-pin DIMM
Memory layout (modules x size)
1 x 8 GB
2 x 8 GB
2 x 8 GB
1 x 16 GB
2 x 8 GB
1 x 16 GB
Internal memory type
DDR3L
DDR3
DDR3
DDR4
DDR4
DDR4
Component for
Notebook
PC/server
PC/server
PC/server
Notebook
PC/server
Internal memory
8GB
16GB
16GB
N/A
N/A
16GB